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hexfet power mosfet micro3 tm (sot-23) d s g 3 1 2 absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ??? 100 r 10 ??? 99 w c/w a max. 1.6 1.3 -55 to + 150 16 0.01 100 1.3 0.8 7.0
features benefits industry-standard pinout sot-23 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 100 v r ds(on) max (@v gs = 10v) 220 q g (typical) 2.5 nc i d (@t a = 25c) 1.6 a m form quantity irlml0100trpbf-1 micro3 ? 000 01001 package type standard pack orderable part number base part number

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electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.10 ??? v/c ??? 190 235 ??? 178 220 v gs(th) gate threshold voltage 1.0 ??? 2.5 v i dss ??? ??? 20 ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 r g internal gate resistance ??? 1.3 ??? gfs forward transconductance 5.7 ??? ??? s q g total gate charge ??? 2.5 ??? q gs gate-to-source charge ??? 0.5 ??? q gd gate-to-drain ("miller") charge ??? 1.2 ??? t d(on) turn-on delay time ??? 2.2 ??? t r rise time ??? 2.1 ??? t d(off) turn-off delay time ??? 9.0 ??? t f fall time ??? 3.6 ??? c iss input capacitance ??? 290 ??? c oss output capacitance ??? 27 ??? c rss reverse transfer capacitance ??? 13 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 20 30 ns q rr reverse recovery charge ??? 13 20 nc ??? ??? ??? ??? pf a 1.1 7.0 v dd =50v na nc ns v ds = v gs , i d = 25 a v ds =100v, v gs = 0v v ds = 100v, v gs = 0v, t j = 125c r ds(on) v gs = 10v, i d = 1.6a static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 4.5v, i d = 1.3a mosfet symbol showing the v ds =50v conditions v gs = 4.5v v gs = 0v v ds = 25v ? = 1.0mhz r g = 6.8 v gs = 4.5v di/dt = 100a/ s v gs = 16v v gs = -16v t j = 25c, i s = 1.1a, v gs = 0v integral reverse p-n junction diode. v ds = 50v, i d = 1.6a i d = 1.6a i d = 1.0a t j = 25c, v r = 50v, i f =1.1a repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. surface mounted on 1 in square cu board refer to application note #an-994.
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fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1.5 2.0 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 1.6a v gs = 10v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v 60 s p ulse width tj = 25c 2.25v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s p ulse width tj = 150c 2.25v vgs top 10.0v 4.50v 3.50v 3.30v 3.25v 2.50v 2.35v bottom 2.25v

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fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 01234567 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v v ds = 20v i d = 1.6a 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.01 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec
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fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 10a. switching time test circuit $
1 0.1 % $ %& $ + - $ 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 0.5 1.0 1.5 2.0 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc
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fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform 1k vcc dut 0 l s 20k vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 2 4 6 8 10 v gs, gate -to -source voltage (v) 150 200 250 300 350 400 450 500 550 600 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 1.6a t j = 25c t j = 125c 0 2 4 6 8 i d , drain current (a) 170 190 210 230 250 270 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v vgs = 4.5v

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fig 15. typical threshold voltage vs. junction temperature typical power vs. time -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25ua i d = 250ua 1e-005 0.0001 0.001 0.01 0.1 1 10 time (sec) 0 20 40 60 80 100 p o w e r ( w )
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micro3 (sot-23 / to-236ab) part marking information

0.08 0.88 0.01 0.89 0.95 bsc millimeters min e e e1 d l a a1 a2 c m o b s y mi n max max .036 .0375 bsc di me ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 bs c l1 l 0.40 0.60 .0118 bsc aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 d 5 6 3 12 ccc cb a b 5 6 e e1 a2 a a1 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 bsc .075 bsc .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 e bbb cb a l2 0.54 r e f l2 .021 re f not e s 1. dime ns ioning and t ole rancing per as me y14.5m-1994. 4 dat um plane h is locat ed at the mold parting line. 5 dat um a and b t o b e det er mine d at dat um plane h . 6 dime ns ions d and e1 are me as ure d at dat um plane h . 2. dimens ions are s h own in millime t e rs [inches ] 3. cont rolling dime ns ion: mil lime t e r. 7 dimension l is the lead lengt h for soldering to a substrate. 8. outline conforms to jedec outline to-236ab. dimens ions does not incl ude mold prot rus ions or i nt e r l e ad f l as h . mol d p r ot r u s ion or i nt e r l e ad f l as h s hall not exce ed 0.25 mm [.010 inch] per s ide. 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] r e comme n de d f oot p r i n t 3x 3x l e ad as s i gnme nt 1. gat e 2. s ource 3. drain 0.08 0.88 0.01 0.89 0.95 bs c mi l l i me t e r s mi n e e e1 d l a a1 a2 c m o b s y mi n max max .036 .0375 bs c dime ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 b s c l1 l 0.40 0.60 .0118 bs c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 2.10 e1 1.90 bs c .075 bsc .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 0.54 ref l2 .021 ref f = irlml6401 aa 27 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a le t t e r y 8 3 1 2 5 4 7 6 0 9 y c 03 wor k we e k 01 02 a w b 04 d 24 26 25 x z y wor k we e k w h = irlml5203 g = irlml2502 k h g f e d c b j y 51 29 28 30 c b d 50 x 52 z note: a l i ne above the work week (as shown here) indicates lead - free. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number x = irlml2244 w = irf ml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 z = irf ml9244 y = irlml2246 indus trial version 2007 ye ar 2003 2001 2002 2005 2004 2006 2007 2009 2008 2010 2003 2001 ye ar 2002 2005 2004 2006 2009 2008 2010 2017 2013 2011 2012 2015 2014 2016 2017 2019 2018 2020 2013 2011 2012 2015 2014 2016 2019 2018 2020
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2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) revision history date comment 10/27/2014 ? .

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